| ‘? I vs-HFAo4TB60PbF, vs-HFA04TB60-N37 www'V'Shay'C°m Vishay Semiconductors ELEcTRIcAL SPEC ATIONS (TJ 5 °C unless otherwise specified) PARAMETER TEST CONDITIONS Cathode to anode breakdown voltage E IR : 100 “A IF : 4.0 A Maximum fonll/ard voltage IF : 8.0 A See fig. 1 IF : 4.0 A, TJ : 125 “C Maximum reverse leakage currentV : V ratedR H See fig. 2See 3 Junction capacitance TJ : 125 “C, VB : 0.8 x VR rated Series inductance 2 Measured lead to lead 5 mm from package bodyDYNAMIO REcovERY cHARAcTERIsTIcs rrJ = 25 °C unless otherwise specified) PARAMETER TEST CONDITIONS IF : 1.0 A, dIF/cit : 200 A/us, VR : 30 V Reverse recovery time See fig. 5, 6 and 16Peak recovery current See fig. 7 and 8Reverse recovew charge See fig. 9 and 10Peak rate of fall of recovery d|(rec)M/dti current during tb See fig. 11 and 12 dI(,ec)M/dt2n:4A M 1 M 1 M 1 M d'F/Vc‘t=:ggiVus 1 E1 R‘ 1 E 2 M 2 THERMAL - MEcHANIcAL sPEcIFIcATIoNs PARAMETER TEST CONDITIONS 0.063" from case (1.6 mm) for 10 5 Thermal resistance, junction to caseTypical socket mount 22 Thermal resistance, junction to ambientThermal resistance’ Mountin surface flat smooth and reased case to neatsink g ’ ’ 9 Mounting torque Marking device Case style TO-220AC HFA04TB6ORevision: 17-Aug-11 2 Document Number: 94035 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurOpe@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.com/doo?91000 |